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Condensed Matter > Materials Science

Title: Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design

Authors: Debdeep Jena, John Simon, Albert (Kejia) Wang, Yu Cao, Kevin Goodman, Jai Verma, Satyaki Ganguly, Guowang Li, Kamal Karda, Vladimir Protasenko, Chuanxin Lian, Thomas Kosel, Patrick Fay, Huili Xing
(Submitted on 30 Oct 2010)
Abstract: The role of spontaneous and piezoelectric polarization in III-V nitride heterostructure devices is discussed. Problems as well as opportunities in incorporating polarization in abrupt and graded heterojunctions composed of binary, ternary, and quaternary nitrides are outlined.
Comments: 7 pages, 5 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
DOI: 10.1002/pssa.201001189
Cite as: arXiv:1011.0062 [cond-mat.mtrl-sci]
  (or arXiv:1011.0062v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Debdeep Jena [view email]
[v1] Sat, 30 Oct 2010 11:23:47 GMT (676kb,D)
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