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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Magnetic quantum ratchet effect in Si-MOSFETs

Abstract: We report on the observation of magnetic quantum ratchet effect in metal-oxide-semiconductor field-effect-transistors on silicon surface (Si-MOSFETs). We show that the excitation of an unbiased transistor by ac electric field of terahertz radiation at normal incidence leads to a direct electric current between the source and drain contacts if the transistor is subjected to an in-plane magnetic field. The current rises linearly with the magnetic field strength and quadratically with the ac electric field amplitude. It depends on the polarization state of the ac field and can be induced by both linearly and circularly polarized radiation. We present the quasi-classical and quantum theories of the observed effect and show that the current originates from the Lorentz force acting upon carriers in asymmetric inversion channels of the transistors.
Comments: 7 pages, 3 figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci)
Journal reference: J. Phys.: Condens. Matter 26, 255802 (2014)
DOI: 10.1088/0953-8984/26/25/255802
Cite as: arXiv:1401.0135 [cond-mat.mes-hall]
  (or arXiv:1401.0135v1 [cond-mat.mes-hall] for this version)

Submission history

From: S. A. Tarasenko [view email]
[v1] Tue, 31 Dec 2013 12:14:57 GMT (618kb)

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