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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Short-range disorder effects on electronic transport in 2D semiconductor structures

Abstract: We study theoretically the relative importance of short-range disorder in determining the low-temperature 2D mobility in GaAs-based structures with respect to Coulomb disorder which is known to be the dominant disorder in semiconductor systems. We give results for unscreened and screened short-range disorder effects on 2D mobility in quantum wells and heterostructures, comparing with the results for Coulomb disorder and finding that the asymptotic high-density mobility is always limited by short-range disorder which, in general, becomes effectively stronger with increasing `carrier density' in contrast to Coulomb disorder. We also predict an intriguing re-entrant metal-insulator transition at very high carrier densities in Si-MOSFETs driven by the short-range disorder associated with surface roughness scattering.
Comments: 5 pages, 4 figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Disordered Systems and Neural Networks (cond-mat.dis-nn)
Journal reference: Phys. Rev. B 89, 121413(R) 2014
DOI: 10.1103/PhysRevB.89.121413
Cite as: arXiv:1401.0183 [cond-mat.mes-hall]
  (or arXiv:1401.0183v2 [cond-mat.mes-hall] for this version)

Submission history

From: E. H. Hwang [view email]
[v1] Tue, 31 Dec 2013 16:59:36 GMT (32kb)
[v2] Sun, 6 Apr 2014 12:24:30 GMT (32kb)

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