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Condensed Matter > Mesoscale and Nanoscale Physics
Title: Short-range disorder effects on electronic transport in 2D semiconductor structures
(Submitted on 31 Dec 2013 (v1), last revised 6 Apr 2014 (this version, v2))
Abstract: We study theoretically the relative importance of short-range disorder in determining the low-temperature 2D mobility in GaAs-based structures with respect to Coulomb disorder which is known to be the dominant disorder in semiconductor systems. We give results for unscreened and screened short-range disorder effects on 2D mobility in quantum wells and heterostructures, comparing with the results for Coulomb disorder and finding that the asymptotic high-density mobility is always limited by short-range disorder which, in general, becomes effectively stronger with increasing `carrier density' in contrast to Coulomb disorder. We also predict an intriguing re-entrant metal-insulator transition at very high carrier densities in Si-MOSFETs driven by the short-range disorder associated with surface roughness scattering.
Submission history
From: E. H. Hwang [view email][v1] Tue, 31 Dec 2013 16:59:36 GMT (32kb)
[v2] Sun, 6 Apr 2014 12:24:30 GMT (32kb)
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