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Condensed Matter > Mesoscale and Nanoscale Physics
Title: Charge Pumping Through a Single Donor Atom
(Submitted on 14 Jan 2014 (v1), last revised 9 Jun 2014 (this version, v3))
Abstract: Presented in this paper is a proof-of-concept for a new approach to single electron pumping based on a Single Atom Transistor (SAT). By charge pumping electrons through an isolated dopant atom in silicon, precise currents of up to 160 pA at 1 GHz are generated, even if operating at 4.2 K, with no magnetic field applied, and only when one barrier is addressed by sinusoidal voltage cycles.
Submission history
From: Giuseppe Carlo Tettamanzi Dr [view email][v1] Tue, 14 Jan 2014 06:41:05 GMT (5033kb,D)
[v2] Sat, 25 Jan 2014 02:59:42 GMT (5063kb,D)
[v3] Mon, 9 Jun 2014 03:59:53 GMT (5133kb,D)
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