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Condensed Matter > Mesoscale and Nanoscale Physics
Title: Laser damage in silicon: energy absorption, relaxation and transport
(Submitted on 22 Jan 2014 (v1), last revised 27 Jun 2014 (this version, v2))
Abstract: Silicon irradiated with an ultrashort 800 nm-laser pulse is studied theoretically using a two temperature description that considers the transient free carrier density during and after irradiation. A Drude model is implemented to account for the highly transient optical parameters. We analyze the importance of considering these density-dependent parameters as well as the choice of the Drude collision frequency. In addition, degeneracy and transport effects are investigated. The importance of each of these processes for resulting calculated damage thresholds is studied.We report damage thresholds calculations that are in very good agreement with experimental results over a wide range of pulse durations.
Submission history
From: Anika Rämer [view email][v1] Wed, 22 Jan 2014 13:34:37 GMT (1082kb,D)
[v2] Fri, 27 Jun 2014 12:10:45 GMT (1114kb,D)
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