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Condensed Matter > Mesoscale and Nanoscale Physics

Title: The emergence of topologically protected surface states in epitaxial Bi(111) thin films

Abstract: Quantum transport measurements including the Altshuler-Aronov-Spivak (AAS) and Aharonov-Bohm (AB) effects, universal conductance fluctuations (UCF), and weak anti-localization (WAL) have been carried out on epitaxial Bi thin films ($10-70$ bilayers) on Si(111). The results show that while the film interior is insulating all six surfaces of the Bi thin films are robustly metallic. We propose that these properties are the manifestation of a novel phenomenon, namely, a topologically trivial bulk system can become topologically non-trivial when it is made into a thin film. We stress that what's observed here is entirely different from the predicted 2D topological insulating state in a single bilayer Bi where only the four side surfaces should possess topologically protected gapless states.
Comments: 5 pages, 5figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1403.0066 [cond-mat.mes-hall]
  (or arXiv:1403.0066v1 [cond-mat.mes-hall] for this version)

Submission history

From: Kai Zhu [view email]
[v1] Sat, 1 Mar 2014 08:44:09 GMT (2835kb)

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