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Condensed Matter > Materials Science
Title: Investigation on Mn$_{3-δ}$Ga/MgO interface for magnetic tunneling junctions
(Submitted on 14 Mar 2014 (v1), last revised 9 May 2014 (this version, v4))
Abstract: The Mn$_3$Ga Heusler compound and related alloys are the most promising materials for the realization of spin-transfer-torque switching in magneto tunneling junctions. Improved performance can be achieved by high quality interfaces in these multilayered structured devices. In this context, the interface between Mn$_{1.63}$Ga and MgO is of particular interest because of its spin polarization properties in tunneling junctions. We performed a chemical characterization of the MgO/Mn$_{1.63}$Ga junction by hard x-ray photoelectron spectroscopy (HAXPES). The experiment indicated the formation of Ga-O bonds at the interface and evidenced changes in the local environment of Mn atoms in the proximity of the MgO film. In addition, we show that the insertion of a metallic Mg-layer interfacing the MgO and Mn--Ga film strongly suppresses the oxidation of gallium.
Submission history
From: Carlos Eduardo ViolBarbosa [view email][v1] Fri, 14 Mar 2014 12:36:16 GMT (2892kb)
[v2] Wed, 26 Mar 2014 12:32:52 GMT (2891kb)
[v3] Tue, 8 Apr 2014 12:10:56 GMT (2891kb)
[v4] Fri, 9 May 2014 14:40:36 GMT (2891kb)
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