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Condensed Matter > Mesoscale and Nanoscale Physics
Title: Theory of a field effect transistor based on semiconductor nanocrystal array
(Submitted on 17 Mar 2014 (v1), last revised 20 Mar 2014 (this version, v2))
Abstract: We study the surface conductivity of a field-effect transistor (FET) made of periodic array of spherical semiconductor nanocrystals (NCs). We show that electrons introduced to NCs by the gate voltage occupy one or two layers of the array. Computer simulations and analytical theory are used to study the array screening and corresponding evolution of electron concentrations of the first and second layers with growing gate voltage. When first layer NCs have two electrons per NC the quantization energy gap between its 1S and 1P levels induces occupation of 1S levels of second layer NCs. Only at a larger gate voltage electrons start leaving 1S levels of second layer NCs and filling 1P levels of first layer NCs. By substantially larger gate voltage, all the electrons vacate the second layer and move to 1P levels of first layer NCs. As a result of this nontrivial evolution of the two layers concentrations, the surface conductivity of FET non-monotonically depends on the gate voltage. The same evolution of electron concentrations leads to non-monotonous behaviour of the differential capacitance.
Submission history
From: Konstantin Reich [view email][v1] Mon, 17 Mar 2014 16:35:43 GMT (3754kb,D)
[v2] Thu, 20 Mar 2014 01:07:02 GMT (3754kb,D)
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