Current browse context:
cond-mat.mtrl-sci
Change to browse by:
References & Citations
Condensed Matter > Materials Science
Title: Exchange-driven magnetoresistance in silicon facilitated by electrical spin injection
(Submitted on 18 Mar 2014)
Abstract: We use electrical spin injection to probe exchange interactions in phosphorus doped silicon (Si:P). The detection is enabled by a magnetoresistance effect that demonstrates the efficiency of exchange in imprinting spin information from the magnetic lead onto the localized moments in the Si:P region. A unique Lorentzian-shaped signal existing only at low temperatures ($\lesssim 25 K$) is observed experimentally and analyzed theoretically in electrical Hanle effect measurement. It stems from spin-dependent scattering of electrons by neutral impurities in Si:P. The shape of this signal is not directly related to spin relaxation but to exchange interaction between spin-polarized electrons that are localized on adjacent impurities.
Link back to: arXiv, form interface, contact.