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Condensed Matter > Materials Science
Title: MoS2 Field-effect Transistors with Graphene/Metal Heterocontacts
(Submitted on 21 Mar 2014 (v1), last revised 11 May 2014 (this version, v2))
Abstract: For the first time, n-type few-layer MoS2 field-effect transistors with graphene/Ti as the hetero-contacts have been fabricated, showing more than 160 mA/mm drain current at 1 {\mu}m gate length with an on-off current ratio of 107. The enhanced electrical characteristic is confirmed in a nearly 2.1 times improvement in on-resistance and a 3.3 times improvement in contact resistance with hetero-contacts compared to the MoS2 FETs without graphene contact layer. Temperature dependent study on MoS2/graphene hetero-contacts has been also performed, still unveiling its Schottky contact nature. Transfer length method and a devised I-V method have been introduced to study the contact resistance and Schottky barrier height in MoS2/graphene /metal hetero-contacts structure.
Submission history
From: Yuchen Du [view email][v1] Fri, 21 Mar 2014 15:04:29 GMT (445kb)
[v2] Sun, 11 May 2014 00:17:57 GMT (445kb)
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