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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Strain dependent conductivity in biased bilayer graphene

Authors: J. A. Crosse
Abstract: Intrinsic bilayer graphene is a gapless semimetal. Under the application of a bias field it becomes a semiconductor with a direct band gap that is proportional to the applied field. Under a layer-asymmetric strain (where the upper layer undergoes compression and lower layer tension or visa-versa) we find that the band gap of a biased bilayer graphene ribbon becomes indirect and, for higher strains, becomes negative returning the material its original semimetal state. As a result, the conductivity of the ribbon increases and can be almost an order of magnitude larger that of the intrinsic unbiased material - a change that can be induced with a strain of only ~2-3%. The conductivity is proportional to the applied strain and the magnitude of the effect is tunable with the bias field. Such layer-asymmetric strains can be achieved by bending, with forces on the order of ~1nN resulting in a layer-asymmetric strain of ~1%. This new electromechanical effect has a wide potential for application in the areas of nano-force microscopy and pressure sensing on the atomic scale.
Comments: Updated to journal version with new title and revised figures. 8 pages, 6 figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Journal reference: Phys. Rev. B 90, 235403 (2014)
DOI: 10.1103/PhysRevB.90.235403
Cite as: arXiv:1404.1655 [cond-mat.mes-hall]
  (or arXiv:1404.1655v2 [cond-mat.mes-hall] for this version)

Submission history

From: John Alexander Crosse [view email]
[v1] Mon, 7 Apr 2014 04:55:13 GMT (4727kb)
[v2] Wed, 3 Dec 2014 05:36:21 GMT (7156kb)

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