Title: Force dependent conductivity of biased bilayer graphene under bending strain

Abstract: Intrinsic bilayer graphene is a gapless semimetal. Under the application of a bias field it becomes a semiconductor with a direct band gap that is proportional to the applied field. Under bending strain we find that the band gap of a biased bilayer graphene ribbon becomes indirect and, for higher strains, becomes negative returning the material its original semimetal state. As a result the conductivity of the ribbon increases and can be up to an order of magnitude larger that of the intrinsic unbiased material. The conductivity is proportional to the applied bending force and the sensitivity of the effect is tunable with the bias field. This new electromechanical effect has a wide potential for application in the areas of nano-force microscopy and pressure sensing on the atomic scale.