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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Electrically Reconfigurable Dual Metal-Gate Planar Field-Effect Transistor for Dopant-free CMOS

Abstract: In this paper, we demonstrate by simulation the feasibility of electrostatically doped and therefore reconfigurable planar field-effect-transistor (FET) structure which is based on our already fabricated and published Si-nanowire (SiNW) devices. The technological cornerstones for this dual-gated general purpose FET contain Schottky S/D junctions on a silicon-on-insulator (SOI) substrate. The transistor type, i.e. n-type or p-type FET, is electrically selectable on the fly by applying an appropriate control-gate voltage which significantly increases the versatility and flexibility in the design of digital integrated circuits.
Comments: Nanoarch 2014 Paris
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1404.2879 [cond-mat.mes-hall]
  (or arXiv:1404.2879v1 [cond-mat.mes-hall] for this version)

Submission history

From: Tillmann Krauss [view email]
[v1] Thu, 10 Apr 2014 17:18:28 GMT (2451kb)

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