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Condensed Matter > Materials Science

Title: Impurity induced enhancement of perpendicular magnetic anisotropy in Fe/MgO tunnel junctions

Abstract: Using first-principles calculations, we investigated the impact of chromium (Cr) and vanadium (V) impurities on the magnetic anisotropy and spin polarization in Fe/MgO magnetic tunnel junctions. It is demonstrated using layer resolved anisotropy calculation technique, that while the impurity near the interface has a drastic effect in decreasing the perpendicular magnetic anisotropy (PMA), its position within the bulk allows maintaining high surface PMA. Moreover, the effective magnetic anisotropy has a strong tendency to go from in-plane to out-of-plane character as a function of Cr and V concentration favoring out-of-plane magnetization direction for ~1.5 nm thick Fe layers at impurity concentrations above 20 %. At the same time, spin polarization is not affected and even enhanced in most situations favoring an increase of tunnel magnetoresistance (TMR) values.
Comments: 6 pages, 3 figures
Subjects: Materials Science (cond-mat.mtrl-sci); Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Computational Physics (physics.comp-ph)
Journal reference: Phys. Rev. B 90, 064422 (2014)
DOI: 10.1103/PhysRevB.90.064422
Cite as: arXiv:1404.3523 [cond-mat.mtrl-sci]
  (or arXiv:1404.3523v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Mairbek Chshiev [view email]
[v1] Mon, 14 Apr 2014 10:13:40 GMT (1781kb)

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