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Condensed Matter > Materials Science

Title: Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector

Abstract: We demonstrate a large electrical spin injection into GaAs at zero magnetic field thanks to an ultrathin perpendicularly magnetized CoFeB contact of a few atomic planes (1.2 nm). The spin-polarization of electrons injected into GaAs was examined by the circular polarization of electroluminescence from a Spin Light Emitting Diode with embedded InGaAs/GaAs quantum wells. The electroluminescence polarization as a function of the magnetic field closely traces the out-of-plane magnetization of the CoFeB/MgO injector. A circular polarization degree of the emitted light as large as 20% at 25 K is achieved at zero magnetic field. Moreover the electroluminescence circular polarization is still about 8% at room temperature.
Comments: *Corresponding author: yuan.lu@univ-lorraine.fr
Subjects: Materials Science (cond-mat.mtrl-sci)
DOI: 10.1103/PhysRevB.90.085310
Cite as: arXiv:1404.4527 [cond-mat.mtrl-sci]
  (or arXiv:1404.4527v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Yuan Lu [view email]
[v1] Thu, 17 Apr 2014 13:54:55 GMT (499kb)

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