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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Top gating of epitaxial (Bi_{1-x}Sb_x)2Te3 topological insulator thin films

Abstract: The tunability of the chemical potential for a wide range encompassing the Dirac point is important for many future devices based on topological insulators. Here we report a method to fabricate highly efficient top gates on epitaxially grown (Bi_{1-x}Sb_x)2Te3 topological insulator thin films without degrading the film quality. By combining an in situ deposited Al2O3 capping layer and a SiN_x dielectric layer deposited at low temperature, we were able to protect the films from degradation during the fabrication processes. We demonstrate that by using this top gate, the carriers in the top surface can be efficiently tuned from n- to p-type. We also show that magnetotransport properties give evidence for decoupled transport through top and bottom surfaces for the entire range of gate voltage, which is only possible in truly bulk-insulating samples.
Comments: 5 pages, 3 figures; accepted for publication in Appl. Phys. Lett
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci)
DOI: 10.1063/1.4873397
Cite as: arXiv:1404.5139 [cond-mat.mes-hall]
  (or arXiv:1404.5139v1 [cond-mat.mes-hall] for this version)

Submission history

From: Yoichi Ando [view email]
[v1] Mon, 21 Apr 2014 08:20:25 GMT (2266kb)

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