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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Spin injection from a ferromagnet into a semiconductor in the case of a rough interface

Abstract: The effect of the interface roughness on the spin injection from a ferromagnet into a semiconductor is studied theoretically. Even a small interface irregularity can lead to a significant enhancement of the injection efficiency. When a typical size of the irregularity, a, is within a domain lambda_F << a << lambda_N, where lambda_F and lambda_N are the spin-diffusion lengths in the ferromagnet and semiconductor, respectively, the geometrical enhancement factor is ~lambda_N. The origin of the enhancement is the modification of the local electric field on small scales ~a near the interface. We demonstrate the effect of enhancement by considering a number of analytically solvable examples of injection through curved ferromagnet-semiconductor interfaces. For a generic curved interface the enhancement factor is ~lambda_N / R, where R is the local radius of curvature.
Comments: 9 pages, 7 figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Journal reference: Phys. Rev. B 91, 045202 (2015)
DOI: 10.1103/PhysRevB.91.045202
Cite as: arXiv:1405.0059 [cond-mat.mes-hall]
  (or arXiv:1405.0059v1 [cond-mat.mes-hall] for this version)

Submission history

From: Robert Roundy [view email]
[v1] Thu, 1 May 2014 00:09:19 GMT (178kb,D)

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