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Condensed Matter > Mesoscale and Nanoscale Physics
Title: A Silicon Nanocrystal Tunnel Field Effect Transistor
(Submitted on 7 May 2014 (v1), last revised 19 May 2014 (this version, v2))
Abstract: In this work, we demonstrate a silicon nanocrystal Field Effect Transistor (ncFET). Its operation is similar to that of a Tunnelling Field Effect Transistor (TFET) with two barriers in series. The tunnelling barriers are fabricated in very thin silicon dioxyde and the channel in intrinsic polycrystalline silicon. The absence of doping eliminates the problem of achieving sharp doping profiles at the junctions, which has proven a challenge for large-scale integration and in principle allows scaling down the atomic level. The demonstrated ncFET features a 10$^4$ on/off current ratio at room temperature, a low 30 pA/$\mu$m leakage current at a 0.5 V bias, an on-state current on a par with typical all-Si TFETs and bipolar operation with high symmetry. Quantum dot transport spectroscopy is used to assess the band structure and energy levels of the silicon island.
Submission history
From: Patrick Harvey-Collard [view email][v1] Wed, 7 May 2014 00:41:00 GMT (936kb,D)
[v2] Mon, 19 May 2014 17:37:13 GMT (936kb,D)
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