Current browse context:
cond-mat.mes-hall
Change to browse by:
References & Citations
Condensed Matter > Mesoscale and Nanoscale Physics
Title: Direct bandgap silicon quantum dots achieved via electronegative capping
(Submitted on 24 May 2014)
Abstract: We propose a novel concept of achieving silicon quantum dots with radiative rates enhanced by more than two orders of magnitude up to the values characteristic for direct band gap semiconductors. Our tight-binding simulations show how the surface engineering can dramatically change the density of confined electrons in real- and $k$-space and give rise to the new conduction band levels in $\Gamma$-valley, thus promoting the direct radiative transitions. The effect may be realized by covering the silicon dots with covalently bonded electronegative ligands, such as alkyl or teflon chains and/or by embedding in highly electronegative medium.
Submission history
From: Alexander N. Poddubny [view email][v1] Sat, 24 May 2014 02:30:25 GMT (2880kb,D)
Link back to: arXiv, form interface, contact.