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Condensed Matter > Disordered Systems and Neural Networks

Title: Fractional Einstein relation for strongly disordered semiconductors

Authors: Takeshi Egami, Koshiro Suzuki, Katsuhiro Watanabe
(Submitted on 2 Jun 2014)
Abstract: A novel Einstein relation (fractional Einstein relation, FER) for the electric conduction in non-crystalline semiconductors is presented. FER and the generalized Einstein relation (GER) [Phys. Rev. E 8, 1296 (1998)] are compared to the result of the Monte Carlo (MC) simulation, and is confirmed that FER exhibits better agreement than GER. The cruial feature of FER is that it reflects the violation of the detailed balance in the coarse-grained hopping process, while it is preserved in the original Einstein relation or GER.
Comments: 5 pages, 3 figures
Subjects: Disordered Systems and Neural Networks (cond-mat.dis-nn)
Cite as: arXiv:1406.0226 [cond-mat.dis-nn]
  (or arXiv:1406.0226v1 [cond-mat.dis-nn] for this version)

Submission history

From: Koshiro Suzuki [view email]
[v1] Mon, 2 Jun 2014 01:02:33 GMT (387kb)
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