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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Controlled Growth of a Line Defect in Graphene and Implications for Gate-Tunable Valley Filtering

Abstract: Atomically precise tailoring of graphene can enable unusual transport pathways and new nanometer-scale functional devices. Here we describe a recipe for the controlled production of highly regular "5-5-8" line defects in graphene by means of simultaneous electron irradiation and Joule heating by applied electric current. High-resolution transmission electron microscopy reveals individual steps of the growth process. Extending earlier theoretical work suggesting valley-discriminating capabilities of a graphene 5-5-8 line defect, we perform first-principles calculations of transport and find a strong energy dependence of valley polarization of the charge carriers across the defect. These findings inspire us to propose a compact electrostatically gated "valley valve" device, a critical component for valleytronics.
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci)
Journal reference: Phys. Rev. B 89, 121407(R) (2014)
DOI: 10.1103/PhysRevB.89.121407
Cite as: arXiv:1406.0887 [cond-mat.mes-hall]
  (or arXiv:1406.0887v1 [cond-mat.mes-hall] for this version)

Submission history

From: Oleg Yazyev [view email]
[v1] Tue, 3 Jun 2014 21:49:25 GMT (4188kb)

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