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Condensed Matter > Materials Science

Title: Current transport and thermoelectric properties of very high power factor Fe3O4 / SiO2 / p-type Si (001) devices

Abstract: The current transport and thermoelectric properties of Fe3O4 / SiO2 / p-type Si(001) heterostructures with Fe3O4 thicknesses of 150, 200, and 350 nm have been investigated between 100 and 300 K. We observe a sharp drop of the in-plane resistivity at 200K due to the onset of conduction along the Si / SiO2 interface related to tunneling of electrons from the Fe3O4 into the accumulation layer of holes at the Si / SiO2 interface, whose existence was confirmed by capacitance-voltage measurements and a two band analysis of the Hall effect. This is accompanied by a large increase of the Seebeck coefficient reaching +1000 {\mu}V/K at 300K that is related to holes in the p-type Si(001) and gives a power factor of 70 mW/K2m when the Fe3O4 layer thickness is reduced down to 150 nm. We show that most of the current flows in the Fe3O4 layer at 300 K, while the Fe3O4 / SiO2 / p-type Si(001) heterostructures behave like tunneling p-n junctions in the transverse direction.
Comments: 5 pages, 4 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Journal reference: Journal of Applied Physics 115, 033709 (2014)
DOI: 10.1063/1.4861729
Cite as: arXiv:1406.1282 [cond-mat.mtrl-sci]
  (or arXiv:1406.1282v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Zacharias Viskadourakis [view email]
[v1] Thu, 5 Jun 2014 07:32:01 GMT (499kb)

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