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Condensed Matter > Mesoscale and Nanoscale Physics
Title: Suspending Effect on Low-Frequency Charge Noise in Graphene Quantum Dot
(Submitted on 16 Jun 2014 (v1), last revised 13 Oct 2015 (this version, v2))
Abstract: Charge noise is critical in the performance of gate-controlled quantum dots (QDs). Here we show the 1/f noise for a microscopic graphene QD is substantially larger than that for a macroscopic graphene field-effect transistor (FET), increasing linearly with temperature. To understand its origin, we suspended the graphene QD above the substrate. In contrast to large area graphene FETs, we find that a suspended graphene QD has an almost-identical noise level as an unsuspended one. Tracking noise levels around the Coulomb blockade peak as a function of gate voltage yields potential fluctuations of order 1 "{\mu}eV", almost one order larger than in GaAs/GaAlAs QDs. Edge states rather than substrate-induced disorders, appear to dominate the 1/f noise, thus affecting the coherency of graphene nano-devices.
Submission history
From: Guo-Ping Guo [view email][v1] Mon, 16 Jun 2014 07:02:17 GMT (1744kb)
[v2] Tue, 13 Oct 2015 08:44:49 GMT (1115kb)
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