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Condensed Matter > Materials Science
Title: Determination of band alignment in the single layer MoS2/WSe2 heterojunction
(Submitted on 19 Jun 2014 (v1), last revised 14 Apr 2015 (this version, v4))
Abstract: The emergence of transition metal dichalcogenides (TMDs) as 2D electronic materials has stimulated proposals of novel electronic and photonic devices based on TMD heterostructures. Here we report the determination of band offsets in TMD heterostructures by using microbeam X-ray photoelectron spectroscopy ({\mu}-XPS) and scanning tunneling microscopy/spectroscopy (STM/S). We determine a type-II alignment between $\textrm{MoS}_2$ and $\textrm{WSe}_2$ with a valence band offset (VBO) value of 0.83 eV and a conduction band offset (CBO) of 0.76 eV. First-principles calculations show that in this heterostructure with dissimilar chalcogen atoms, the electronic structures of $\textrm{WSe}_2$ and $\textrm{MoS}_2$ are well retained in their respective layers due to a weak interlayer coupling. Moreover, a VBO of 0.94 eV is obtained from density functional theory (DFT), consistent with the experimental determination.
Submission history
From: Chendong Zhang [view email][v1] Thu, 19 Jun 2014 18:19:02 GMT (5973kb)
[v2] Fri, 20 Jun 2014 01:27:24 GMT (5973kb)
[v3] Fri, 1 Aug 2014 16:40:41 GMT (4190kb)
[v4] Tue, 14 Apr 2015 03:15:38 GMT (1185kb)
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