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Condensed Matter > Materials Science
Title: Self-consistent Capacitance-Voltage Characterization of Gate-all-around Graded Nanowire Transistor
(Submitted on 20 Jun 2014)
Abstract: This paper presents a self-consistent numerical model for calculating the charge profile and gate capacitance and therefore obtaining C-V characterization for a gate-all-around graded nanowire MOSFET with a high mobility axially graded In0.75Ga0.25As + In0.53Ga0.47As channel incorporating strain and atomic layer deposited Al2O3/20nm Ti gate. C-V characteristics with introduction and variation of In-composition grading and also grading in doping concentration are explored.Finite element method has been used to solve Poisson's equation and Schr\"odinger's equation self-consistently considering wave function penetration and other quantum effects to calculate gate capacitance and charge profile for different gate biases. The device parameters are taken from a recently introduced experimental device.
Submission history
From: Saeed-Uz-Zaman Khan [view email][v1] Fri, 20 Jun 2014 02:04:20 GMT (588kb)
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