Title: Coherent control of single spins in silicon carbide at ambient condition

Abstract: Spins in solids are cornerstone elements of quantum spintronics. Leading contenders such as defects in diamond, or individual phosphorous dopants in silicon have shown spectacular progress but either miss established nanotechnology or an efficient spin-photon interface. Silicon carbide (SiC) combines the strength of both systems: It has a large bandgap with deep defects and benefits from mature fabrication techniques. Here we demonstrate optical detection of single silicon vacancies as well as optical spin polarization and addressing of single spins at room temperature. We show coherent control of a single defect spin and find spin coherence times of 80 {\mu}s under ambient conditions. Our study provides evidence that SiC is a promising system for atomic-scale spintronics and quantum technology.