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Condensed Matter > Materials Science

Title: Heterojunction Hybrid Devices from Vapor Phase Grown MoS$_{2}$

Abstract: We investigate a vertically-stacked hybrid photodiode consisting of a thin n-type molybdenum disulfide (MoS$_{2}$) layer transferred onto p-type silicon. The fabrication is scalable as the MoS$_{2}$ is grown by a controlled and tunable vapor phase sulfurization process. The obtained large-scale p-n heterojunction diodes exhibit notable photoconductivity which can be tuned by modifying the thickness of the MoS$_{2}$ layer. The diodes have a broad spectral response due to direct and indirect band transitions of the nanoscale MoS$_{2}$. Further, we observe a blue-shift of the spectral response into the visible range. The results are a significant step towards scalable fabrication of vertical devices from two-dimensional materials and constitute a new paradigm for materials engineering.
Comments: 23 pages with 4 figures. This article has been published in Scientific Reports. (26 June 2014, doi:10.1038/srep05458)
Subjects: Materials Science (cond-mat.mtrl-sci)
Journal reference: Scientific Reports 4 (2014) 5458
DOI: 10.1038/srep05458
Cite as: arXiv:1407.0270 [cond-mat.mtrl-sci]
  (or arXiv:1407.0270v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Chanyoung Yim [view email]
[v1] Tue, 1 Jul 2014 15:01:26 GMT (2373kb)

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