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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Electronic transport in disordered graphene antidot lattice devices

Abstract: Nanostructuring of graphene is in part motivated by the requirement to open a gap in the electronic band structure of graphene. In particular, a periodically perforated graphene sheet in the form of an antidot lattice may have such a gap. Such systems have been investigated experimentally and theoretically with a view towards application in transistor or waveguiding devices. The desired properties have been predicted for atomically precise systems, but fabrication methods will inexorably introduce significant levels of disorder in the shape, position and edge configurations of individual antidots. We have calculated the electronic transport properties of a wide range of finite graphene antidot devices with the aim of determining the effect of such disorders on their performance. Modest geometric disorder is seen to have a detrimental effect on the performance of devices containing small, tightly packed antidots which have optimal performance in pristine lattices. Larger antidots, meanwhile, display a range of effects which strongly depend on their edge geometry. The transport gap of antidot systems with armchair edges is seen to be far more robust than that composed from antidots with zigzag or mixed edges. The performance of waveguiding devices is also investigated. Here the role of disorder is slightly different and can enhance performance by extending the energy range over which waveguiding behaviour is observed.
Comments: 16 pages, 13 figures, submitted
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1407.0311 [cond-mat.mes-hall]
  (or arXiv:1407.0311v1 [cond-mat.mes-hall] for this version)

Submission history

From: Stephen Power [view email]
[v1] Tue, 1 Jul 2014 16:31:41 GMT (6056kb)
[v2] Mon, 8 Sep 2014 13:36:31 GMT (6057kb)

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