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Condensed Matter > Materials Science
Title: Implantation and atomic scale investigation of self-interstitials in graphene
(Submitted on 11 Jul 2014 (v1), last revised 16 Jan 2015 (this version, v2))
Abstract: Crystallographic defects play a key role in determining the properties of crystalline materials. The new class of two-dimensional materials, foremost graphene, have enabled atomically resolved studies of defects, such as vacancies, grain boundaries, dislocations, and foreign atom substitutions. However, atomic resolution imaging of implanted self-interstitials has so far not been reported in any three- but also not in any two-dimensional material. Here, we deposit extra carbon into single-layer graphene at soft landing energies of ~1 eV using a standard carbon coater. We identify all the self-interstitial dimer structures theoretically predicted earlier, employing 80 kV aberration-corrected high-resolution transmission electron microscopy. We demonstrate accumulation of the interstitials into larger aggregates and dislocation dipoles, which we predict to have strong local curvature by atomistic modeling, and to be energetically favourable configurations as compared to isolated interstitial dimers. Our results contribute to the basic knowledge on crystallographic defects, and lay out a pathway into engineering the properties of graphene by pushing the crystal into a state of metastable supersaturation.
Submission history
From: Ossi Lehtinen [view email][v1] Fri, 11 Jul 2014 08:58:24 GMT (2304kb,D)
[v2] Fri, 16 Jan 2015 12:30:35 GMT (2121kb,D)
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