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Condensed Matter > Materials Science
Title: Native point defects in few-layer phosphorene
(Submitted on 18 Sep 2014 (v1), last revised 20 Aug 2015 (this version, v3))
Abstract: Using hybrid density functional theory combined with a semiempirical van der Waals dispersion correction, we have investigated the structural and electronic properties of vacancies and self-interstitials in defective few-layer phosphorene. We find that both a vacancy and a self-interstitial defect are more stable in the outer layer than in the inner layer. The formation energy and transition energy of both a vacancy and a self-interstitial P defect decrease with increasing film thickness, mainly due to the upward shift of the host valence band maximum in reference to the vacuum level. Consequently, both vacancies and self-interstitials could act as shallow acceptors, and this well explains the experimentally observed p-type conductivity in few-layer phosphorene. On the other hand, since these native point defects have moderate formation energies and are stable in negatively charged states, they could also serve as electron compensating centers in n-type few-layer phosphorene.
Submission history
From: Vei Wang [view email][v1] Thu, 18 Sep 2014 01:27:27 GMT (3604kb,D)
[v2] Mon, 20 Oct 2014 14:59:37 GMT (8417kb,D)
[v3] Thu, 20 Aug 2015 14:34:03 GMT (3731kb,D)
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