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Condensed Matter > Strongly Correlated Electrons
Title: Electronic structure of tungsten-doped vanadium dioxide
(Submitted on 1 Jul 2015 (v1), last revised 18 Sep 2017 (this version, v4))
Abstract: A common method of adjusting the metal-insulator transition temperature of M$_{1}$ VO$_{2}$ is via disruption of the Peierls pairing by doping, or inputting stress or strain. However, since adding even small amounts of dopants will change the band structure, it is unclear how doped VO$_{2}$ retains its insulating character observed in experiments. While strong correlations may be responsible for maintaining a gap, theoretical evidence for this has been very difficult to obtain due to the complexity of the many-body problem involved. In this work we use GW calculations modified to include strong local $\textbf{k}$-space interactions to investigate the changes in band structure from tungsten doping. We find that the combination of carrier doping and the experimentally observed structural defects introduced by inclusion of tungsten are consistent with a change from band-like to Mott-insulating behavior.
Submission history
From: Jamie Booth [view email][v1] Wed, 1 Jul 2015 05:08:07 GMT (680kb,D)
[v2] Mon, 6 Jul 2015 00:07:33 GMT (680kb,D)
[v3] Mon, 22 Feb 2016 04:34:46 GMT (2288kb,D)
[v4] Mon, 18 Sep 2017 23:40:33 GMT (2276kb,D)
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