Current browse context:
cond-mat.mes-hall
Change to browse by:
References & Citations
Condensed Matter > Mesoscale and Nanoscale Physics
Title: Pinning-induced pn junction formation in low-bandgap two-dimensional semiconducting systems
(Submitted on 1 Sep 2015)
Abstract: A model is presented for $pn$ junction formation near metal-semiconductor contacts in two-dimensional semiconducting systems such as graphene. Carrier type switching occurs in a region near the metal-semiconductor junction when energy band bending leads to a crossing between the junction Fermi level and the Dirac energy. A bias-dependent depletion region occurs due to the minimization of carrier density, which is shown to act as an additional parasitic resistance in devices. The $pn$ junction resistance is demonstrated by its implementation in a transfer length structure.
Link back to: arXiv, form interface, contact.