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Physics > Instrumentation and Detectors

Title: Nitrogen-Vacancy Centers in Diamond for Current Imaging at the Redistributive Layer Level of Integrated Circuits

Authors: Antoine Nowodzinski (1), Mayeul Chipaux (2), Loïc Toraille (2), Vincent Jacques (3), Jean-François Roch (3), Thierry Debuisschert (2) ((1) CEA-LETI Grenoble France, (2) Thales Research & Technology Palaiseau France, (3) Laboratoire Aimé Cotton Orsay France)
Abstract: We present a novel technique based on an ensemble of Nitrogen-Vacancy (NV) centers in diamond to perform Magnetic Current Imaging (MCI) on an Integrated Circuit (IC). NV centers in diamond allow measuring the three components of the magnetic fields generated by a mA range current in an IC structure over a field of 50 x 200 {\mu}m^2 with sub-micron resolution. Vector measurements allow using a more robust algorithm than those used for MCI using Giant Magneto Resistance (GMR) or Superconducting Quantum Interference Device (SQUID) sensors and it is opening new current reconstruction prospects. Calculated MCI from these measurements shows a very good agreement with theoretical current path. Acquisition time is around 10 sec, which is much faster than scanning measurements using SQUID or GMR. The experimental set-up relies on a standard optical microscope, and the measurements can be performed at room temperature and atmospheric pressure. These early experiments, not optimized for IC, show that NV centers in diamond could become a real alternative for MCI in IC.
Comments: 7 pages, 4 figures
Subjects: Instrumentation and Detectors (physics.ins-det); Materials Science (cond-mat.mtrl-sci)
Journal reference: Microelectronics Reliability 55 (2015) 1549-1553
DOI: 10.1016/j.microrel.2015.06.069
Cite as: arXiv:1512.01102 [physics.ins-det]
  (or arXiv:1512.01102v1 [physics.ins-det] for this version)

Submission history

From: Thierry Debuisschert [view email]
[v1] Thu, 3 Dec 2015 15:03:08 GMT (1293kb)

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