Title: Hydrogen influence on generalized stacking fault of zirconium basal plane: First-principles calculation study

Abstract: The infuence of hydrogen on the generalized stacking fault (GSF) energy of the basal plane along the <10-10> and <11-20> directions in the hcp Zr were investigated by using the first-principles calculation method. The modification of the GSF energy were studied with respect to the different distances of H atoms away from the slip plane and hydrogen content there. The calculation results have shown that the GSF energy along the < 10-10 > direction drastically reduces when H atoms locate nearby the slip plane. But H atoms slightly decrease the GSF barrier for the <11-20> slipping case. Meanwhile, with the increase of hydrogen density around the slip plane, the GSF energies along both the shift directions further reduced. The physical origin of the reduction of GSF energy due to the existence of hydrogen atoms in Zr was analyzed based on the Bader charge method. It is interpreted by the Coulomb repulsion of the Zr atoms besides of the slip plane due to the charge transfer from Zr to H atoms.