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Physics > Optics

Title: Photoemission-based microelectronic devices

Abstract: The vast majority of modern microelectronic devices rely on carriers within semiconductors due to their integrability. Therefore, the performance of these devices is limited due to natural semiconductor properties such as band gap and electron velocity. Replacing the semiconductor channel in conventional microelectronic devices with a gas or vacuum channel may scale their speed, wavelength, and power beyond what is available today. However, liberating electrons into gas/vacuum in a practical microelectronic device is quite challenging. It often requires heating, applying high voltages, or using lasers with short wavelengths or high powers. Here, we show that the interaction between an engineered resonant surface (metasurface) and a low-power infrared (IR) laser can cause enough photoemission (via electron tunneling) to implement feasible microelectronic devices such as transistors, switches, and modulators. Photoemission-based devices benefit from the advantages of gas-plasma/vacuum electronic devices while preserving the integrability of semiconductor-based devices.
Subjects: Optics (physics.optics); Instrumentation and Detectors (physics.ins-det); Plasma Physics (physics.plasm-ph)
DOI: 10.1038/ncomms13399
Cite as: arXiv:1512.02197 [physics.optics]
  (or arXiv:1512.02197v4 [physics.optics] for this version)

Submission history

From: Ebrahim Forati [view email]
[v1] Mon, 7 Dec 2015 20:33:53 GMT (8990kb,D)
[v2] Tue, 29 Dec 2015 00:01:17 GMT (7427kb,D)
[v3] Sat, 16 Jan 2016 20:39:13 GMT (5308kb,D)
[v4] Tue, 19 Apr 2016 21:07:09 GMT (7392kb,D)

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