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Physics > Optics
Title: Non equilibrium optical properties in semiconductors from first--principles: a combined theoretical and experimental study of bulk silicon
(Submitted on 1 Mar 2016 (v1), last revised 14 Apr 2017 (this version, v2))
Abstract: The calculation of the equilibrium optical properties of bulk silicon by using the Bethe--Salpeter equation solved in the Kohn--Sham basis represents a cornerstone in the development of an ab--initio approach to the optical and electronic properties of materials. Nevertheless calculations of the {\em transient} optical spectrum using the same efficient and successful scheme are scarce. We report, here, a joint theoretical and experimental study of the transient reflectivity spectrum of bulk silicon. Femtosecond transient reflectivity is compared to a parameter--free calculation based on the non--equilibrium Bethe--Salpeter equation. By providing an accurate description of the experimental results we disclose the different phenomena that determine the transient optical response of a semiconductor. We give a parameter--free interpretation of concepts like bleaching, photo--induced absorption and stimulated emission, beyond the Fermi golden rule. We also introduce the concept of optical gap renormalization, as a generalization of the known mechanism of band gap renormalization. The present scheme successfully describes the case of bulk silicon, showing its universality and accuracy.
Submission history
From: Davide Sangalli [view email][v1] Tue, 1 Mar 2016 10:53:46 GMT (201kb)
[v2] Fri, 14 Apr 2017 10:22:58 GMT (203kb)
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