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Condensed Matter > Mesoscale and Nanoscale Physics
Title: Individual electron and hole localization in submonolayer InN quantum sheets embedded in GaN
(Submitted on 3 May 2016 (v1), last revised 19 Jul 2016 (this version, v2))
Abstract: We investigate sub-monolayer InN quantum sheets embedded in GaN(0001) by temperature-dependent photoluminescence spectroscopy under both continuous-wave and pulsed excitation. Both the peak energy and the linewidth of the emission band associated with the quantum sheets exhibit an anomalous dependence on temperature indicative of carrier localization. Photoluminescence transients reveal a power law decay at low temperatures reflecting that the recombining electrons and holes occupy spatially separate, individual potential minima reminiscent of conventional (In,Ga)N(0001) quantum wells exhibiting the characteristic disorder of a random alloy. At elevated temperatures, carrier delocalization sets in and is accompanied by a thermally activated quenching of the emission. We ascribe the strong nonradiative recombination to extended states in the GaN barriers and confirm our assumption by a simple rate-equation model.
Submission history
From: Felix Feix [view email][v1] Tue, 3 May 2016 12:33:21 GMT (166kb)
[v2] Tue, 19 Jul 2016 12:25:11 GMT (111kb,D)
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