Current browse context:
cond-mat.mtrl-sci
Change to browse by:
References & Citations
Condensed Matter > Materials Science
Title: Near Unity Absorption in Van der Waals Semiconductors for Ultrathin Optoelectronics
(Submitted on 13 May 2016 (v1), last revised 26 Aug 2016 (this version, v2))
Abstract: We demonstrate near unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (< 15 nm) Van der Waals semiconductor structures by coupling to strongly damped optical modes of semiconductor/metal heterostructures. We further fabricate Schottky junction devices using these highly absorbing heterostructures and characterize their optoelectronic performance. Our work addresses one of the key criteria to enable TMDCs as potential candidates to achieve high optoelectronic efficiency.
Submission history
From: Deep Jariwala [view email][v1] Fri, 13 May 2016 06:28:23 GMT (2522kb)
[v2] Fri, 26 Aug 2016 19:34:48 GMT (1814kb)
Link back to: arXiv, form interface, contact.