We gratefully acknowledge support from
the Simons Foundation and member institutions.
Full-text links:


Current browse context:


Change to browse by:

References & Citations


(what is this?)
CiteULike logo BibSonomy logo Mendeley logo del.icio.us logo Digg logo Reddit logo ScienceWISE logo

Condensed Matter > Materials Science

Title: Absolute Reference Energy to Realign the Band-edges of Inorganic Semiconductors Using First-principles Calculations

Abstract: The challenge of finding an absolute reference energy from first-principles simulations to realigning semiconductor's valence band-top and conduction band-bottom, a theoretical methodology is proposed based on plane-wave calculations as implemented within state-of-art density functional theory. We have studied some of inorganic binary semiconductors, including both oxides and non-oxides, as for example rutile- and anatase TiO2, wurtzite ZnO, rutile SnO2, blende phase of GaP, GaAs, InP, ZnTe, CdS, CdSe, and SiC, those are well known and qualitatively important for photoelectrochemical, optoelectronic device applications in their standalone and/or heterostructure morphologies. The calculated band-edges of these well known semiconductors are realigned with respect to our proposed absolute vacuum reference energy, which is defined with our proposed corrections and compared to their available experimental values from flat-band measurement. The prediction is reasonably well agreed with known experimental flat-band measured data. Our estimated mean absolute error bar for these set of eleven compounds is ~ 0.17 eV, closer to the known experimental limit 0.10-0.20 eV.
Comments: 21 Pages Manuscript, with 4 Figures and 2 Tables. SI report 12 Pages
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1812.01293 [cond-mat.mtrl-sci]
  (or arXiv:1812.01293v2 [cond-mat.mtrl-sci] for this version)

Submission history

From: Tilak Das [view email]
[v1] Tue, 4 Dec 2018 09:35:51 GMT (1837kb)
[v2] Tue, 11 Dec 2018 18:53:59 GMT (992kb)

Link back to: arXiv, form interface, contact.