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Condensed Matter > Mesoscale and Nanoscale Physics
Title: Single-spin qubits in isotopically enriched silicon at low magnetic field
(Submitted on 20 Dec 2018 (v1), last revised 23 Aug 2019 (this version, v5))
Abstract: Single-electron spin qubits employ magnetic fields on the order of 1 Tesla or above to enable quantum state readout via spin-dependent-tunnelling. This requires demanding microwave engineering for coherent spin resonance control and significant on-chip real estate for electron reservoirs, both of which limit the prospects for large scale multi-qubit systems. Alternatively, singlet-triplet (ST) readout enables high-fidelity spin-state measurements in much lower magnetic fields, without the need for reservoirs. Here, we demonstrate low-field operation of metal-oxide-silicon (MOS) quantum dot qubits by combining coherent single-spin control with high-fidelity, single-shot, Pauli-spin-blockade-based ST readout. We discover that the qubits decohere faster at low magnetic fields with $T_{2}^{Rabi}=18.6$~$\mu$s and $T_2^*=1.4$~$\mu$s at 150~mT. Their coherence is limited by spin flips of residual $^{29}$Si nuclei in the isotopically enriched $^{28}$Si host material, which occur more frequently at lower fields. Our finding indicates that new trade-offs will be required to ensure the frequency stabilization of spin qubits and highlights the importance of isotopic enrichment of device substrates for the realization of a scalable silicon-based quantum processor.
Submission history
From: Ruichen Zhao [view email][v1] Thu, 20 Dec 2018 03:35:40 GMT (643kb,D)
[v2] Tue, 19 Mar 2019 02:27:01 GMT (2785kb,D)
[v3] Thu, 21 Mar 2019 02:07:33 GMT (1896kb,D)
[v4] Fri, 22 Mar 2019 01:27:04 GMT (3845kb,D)
[v5] Fri, 23 Aug 2019 15:02:14 GMT (3319kb,D)
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