References & Citations
Quantum Physics
Title: Integrated $^{9}$Be$^{+}$ multi-qubit gate device for the ion-trap quantum computer
(Submitted on 19 Feb 2019 (v1), last revised 4 Sep 2019 (this version, v3))
Abstract: We demonstrate the experimental realization of a two-qubit M{\o}lmer-S{\o}rensen gate on a magnetic field-insensitive hyperfine transition in $^9$Be$^+$ ions using microwave-near fields emitted by a single microwave conductor embedded in a surface-electrode ion trap. The design of the conductor was optimized to produce a high oscillating magnetic field gradient at the ion position. The measured gate fidelity is determined to be $98.2\pm1.2\,\%$ and is limited by technical imperfections, as is confirmed by a comprehensive numerical error analysis. The conductor design can potentially simplify the implementation of multi-qubit gates and represents a self-contained, scalable module for entangling gates within the quantum CCD architecture for an ion-trap quantum computer.
Submission history
From: Christian Ospelkaus [view email][v1] Tue, 19 Feb 2019 12:43:58 GMT (123kb,D)
[v2] Tue, 26 Feb 2019 12:43:31 GMT (123kb,D)
[v3] Wed, 4 Sep 2019 09:52:48 GMT (169kb,D)
Link back to: arXiv, form interface, contact.