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Condensed Matter > Strongly Correlated Electrons
Title: Phonon scattering induced carrier resistivity in twisted double bilayer graphene
(Submitted on 19 Jun 2019 (v1), last revised 28 Jun 2020 (this version, v2))
Abstract: In this work we carry out a theoretical study of the phonon-induced resistivity in twisted double bilayer graphene (TDBG), in which two Bernal-stacked bilayer graphene devices are rotated relative to each other by a small angle $\theta$. We show that at small twist angles ($\theta\sim 1^\circ$) the effective mass of the TDBG system is greatly enhanced, leading to a drastically increased phonon-induced resistivity in the high-temperature limit where phonon scattering leads to a linearly increasing resistivity with increasing temperature. We also discuss possible implications of our theory on superconductivity in such a system, and provide an order of magnitude estimation of the superconducting transition temperature.
Submission history
From: Xiao Li [view email][v1] Wed, 19 Jun 2019 17:13:15 GMT (1236kb,D)
[v2] Sun, 28 Jun 2020 09:57:43 GMT (1746kb,D)
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