Current browse context:
physics.app-ph
Change to browse by:
References & Citations
Physics > Applied Physics
Title: Threshold Voltage variation with respect to Gate geometry in Nano-scale MOSFETS
(Submitted on 4 Nov 2019)
Abstract: The tremendous progress in Metal Oxide Semiconductor (MOS) technology has been a direct consequence of device scaling for past several decades. But as we have entered the nanometer era many problems related to leakage currents and other issues related to variability impacting the yield are of concern. Herein we have investigated how the change in the Fin Architecture and Gate Length of the MOS device impacts the Threshold Voltage.
Link back to: arXiv, form interface, contact.