Title: Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper

Abstract: Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, enabling new applications in the context of the Internet of Things (IoTs). Two-dimensional materials have outstanding electronic and optical properties, and they are compatible with flexible substrates. Besides, combining different 2D materials enables to design a large variety of devices, which could be exploited in many IoTs applications, ranging from wearable electronics to smart packaging. In this work, we demonstrate high-performance MoS2 field-effect transistors on paper substrates fabricated with a new channel-array approach, which combines the advantages of chemical vapor deposition (CVD) and inkjet-printing as fabrication techniques. This method is based on the preparation of a channel array, i.e., the pre-deposition on paper of a pattern of CVD-grown MoS2 to be used as channels. Inkjet printing is then used to complete transistors and circuits fabrication, through the deposition of dielectric layers, contacts, and connections. We show that the channel-array approach allows the fabrication of 2D materials-based transistors on paper with excellent current modulation (ION to IOFF ratio up to 100000) and mobility (up to 15 cm2 V-1 s-1). Fully functional integrated circuits of digital and analog building blocks, such as high-gain inverters, logic gates, and current mirrors are demonstrated, confirming the potential of this approach for ubiquitous electronics on paper.