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Condensed Matter > Materials Science
Title: Substrate Dependent Resistive Switching in Amorphous-HfOx Memristors: An Experimental and Computational Investigation
(Submitted on 7 Dec 2019 (v1), last revised 1 Apr 2020 (this version, v2))
Abstract: While two-terminal HfOX (x<2) memristor devices have been studied for ion transport and current evolution, there have been limited reports on the effect of the long-range thermal environment on their performance. In this work, amorphous-HfOX based memristor devices on two different substrates, thin SiO2(280 nm)/Si and glass, with different thermal conductivities in the range from 1.2 to 138 W/m-K were fabricated. Devices on glass substrates exhibit lower reset voltage, wider memory window and, in turn, a higher performance window. In addition, the devices on glass show better endurance than the devices on the SiO2/Si substrate. These devices also show non-volatile multi-level resistances at relatively low operating voltages which is critical for neuromorphic computing applications. A Multiphysics COMSOL computational model is presented that describes the transport of heat, ions and electrons in these structures. The combined experimental and COMSOL simulation results indicate that the long-range thermal environment can have a significant impact on the operation of HfOx-based memristors and that substrates with low thermal conductivity can enhance switching performance.
Submission history
From: Pradip Basnet [view email][v1] Sat, 7 Dec 2019 19:09:50 GMT (1725kb)
[v2] Wed, 1 Apr 2020 23:51:32 GMT (714kb)
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