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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Electron transport through metal/MoS2 interfaces: edge- or area-dependent process?

Abstract: In ultra-thin two-dimensional (2-D) materials, the formation of ohmic contacts with top metallic layers is a challenging task that involves different processes than in bulk-like structures. Besides the Schottky barrier height, the transfer length of electrons between metals and 2-D monolayers is a highly relevant parameter. For MoS$_2$, both short ($\le$30 nm) and long ($\ge$0.5 $\mu$m) values have been reported, corresponding to either an abrupt carrier injection at the contact edge or a more gradual transfer of electrons over a large contact area. Here we use \textit{ab initio} quantum transport simulations to demonstrate that the presence of an oxide layer between a metallic contact and a MoS$_2$ monolayer, for example TiO$_2$ in case of titanium electrodes, favors an area-dependent process with a long transfer length, while a perfectly clean metal-semiconductor interface would lead to an edge process. These findings reconcile several theories that have been postulated about the physics of metal/MoS$_2$ interfaces and provide a framework to design future devices with lower contact resistances.
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Journal reference: Nano Lett. 2019, 19, 6, 3641-3647
DOI: 10.1021/acs.nanolett.9b00678
Cite as: arXiv:1912.04847 [cond-mat.mes-hall]
  (or arXiv:1912.04847v1 [cond-mat.mes-hall] for this version)

Submission history

From: Mathieu Luisier [view email]
[v1] Tue, 10 Dec 2019 17:37:24 GMT (3608kb)

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