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Condensed Matter > Materials Science
Title: Electric field induced metallic behavior in thin crystals of ferroelectric α-In2Se3
(Submitted on 13 Dec 2019 (v1), last revised 11 Aug 2020 (this version, v3))
Abstract: Ferroelectric semiconductor field effect transistors (FeSmFETs), which employ ferroelectric semiconducting thin crystals of {\alpha}-In2Se3 as the channel material as opposed to the gate dielectric in conventional ferroelectric FETs (FeFETs) were prepared and measured from room to the liquid-helium temperatures. These FeSmFETs were found to yield evidence for the reorientation of the electrical polarization and an electric field induced metallic state in {\alpha}-In2Se3. Our findings suggest that FeSmFETs can serve as a platform for the fundamental study of ferroelectric metals as well as the exploration of the integration of data storage and logic operations in the same device.
Submission history
From: Justin Rodriguez [view email][v1] Fri, 13 Dec 2019 21:50:04 GMT (1385kb)
[v2] Thu, 21 May 2020 16:39:53 GMT (828kb)
[v3] Tue, 11 Aug 2020 18:22:17 GMT (2828kb)
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