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Quantum Physics
Title: Experimental characterization of spin-3/2 silicon vacancy centers in 6H-SiC
(Submitted on 19 Jan 2020 (v1), last revised 28 Apr 2020 (this version, v2))
Abstract: Silicon carbide (SiC) hosts many interesting defects that can potentially serve as qubits for a range of advanced quantum technologies. Some of them have very interesting properties, making them potentially useful, e.g. as interfaces between stationary and flying qubits. Here we present a detailed overview of the relevant properties of the spins in silicon vacancies of the 6H-SiC polytype. This includes the temperature-dependent photoluminescence, optically detected magnetic resonance, and the relaxation times of the longitudinal and transverse components of the spins, during free precession as well as under the influence of different refocusing schemes.
Submission history
From: Harpreet Singh [view email][v1] Sun, 19 Jan 2020 14:59:07 GMT (1636kb,D)
[v2] Tue, 28 Apr 2020 16:35:05 GMT (1797kb,D)
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