Current browse context:
cond-mat.mtrl-sci
Change to browse by:
References & Citations
Condensed Matter > Materials Science
Title: Chemical segregation in Ge2Sb2Te5 thin films during in-situ heating
(Submitted on 22 Jan 2020)
Abstract: Germanium antimony telluride has been the most used and studied phase-change material for electronic memory due to its suitable crystallization temperature, amorphous to crystalline resistance contrast, and stability of the amorphous phase. In this work, the segregation of Ge in a Ge2Sb2Te5 film of 30 nm thickness during heating inside the transmission electron microscope was observed and characterized. The Ge2Sb2Te5 film was deposited using sputtering on a Protochips Fusion holder and left uncapped in atmosphere for about four months. Oxygen incorporated within the film played a significant role in the chemical segregation observed which resulted in amorphous Ge-O grain boundaries and Sb and Te rich crystalline domains. Such composition changes can occur when the phase-change material interfaces insulating oxide layers in an integrated device and would significantly impact its electrical and thermal properties.
Link back to: arXiv, form interface, contact.